AIM: To study the I-V Characteristics of Ordinary Diode.
APPARATUS: P-N Junction Diode, Battery, Connecting Wires, Resistances, Voltmeter, Ammeter.
THEORY: A P-N junction is formed by doping the P-type with trivalent impurities which has excess holes and the N-type with pentavalent impurities which has excess electrons. In forward bias, a positive voltage on P allows current flow by reducing the potential barrier. In reverse bias, a negative voltage on P blocks current, creating a wider depletion region. The junction’s behavior depends on the type of impurities and bias applied. In step up, there is a reduction in potential barrier In a PN junction diode, the positive and negative terminals are identified based on the p-type and n-type materials, respectively.
Cathode and Anode:
